BC160-10 GP BJT

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  • 5 FAIRCHILD
  • 24 INTERMETALL
  • 16 NATIONAL SEMICONDUCTOR
  • 11003 NEW JERSEY SEMICONDUCTOR
  • 18 SIEMENS

Trans GP BJT PNP 40V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 1@100mA@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 3700 mW
Maximum Transition Frequency 50(Min) MHz
Type PNP