BC161 GP BJT
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- 7 AMR TECHNOLOGY
- 104 FAIRCHILD
- 110 NATIONAL SEMICONDUCTOR
- 12570 NEW JERSEY SEMICONDUCTOR
- 3 SGS
Trans GP BJT PNP 60V 1A 3-Pin TO-39
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.1(Typ)@10mA@100mA | 0.35(Typ)@50mA@500mA |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 650 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | PNP |