BC161-16 GP BJT

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  • 41 FAIRCHILD
  • 1 NATIONAL SEMICONDUCTOR
  • 12570 NEW JERSEY SEMICONDUCTOR
  • 2 SIEMENS

Trans GP BJT PNP 60V 0.1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 50(Min) MHz
Type PNP