BC179B GP BJT

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  • 20 NATIONAL SEMICONDUCTOR
  • 11155 NEW JERSEY SEMICONDUCTOR
  • 58 SGS
  • 35 SIEMENS

Trans GP BJT PNP 20V 0.1A 3-Pin TO-18

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.2@0.5mA@10mA V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 300 mW
Type PNP