BC239 GP BJT
Datasheet: View
Stock
- 6 NATIONAL SEMICONDUCTOR
- 5176 NEW JERSEY SEMICONDUCTOR
- 26 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@5mA@100mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 280(Typ) | MHz |
| Type | NPN |