BC257 GP BJT

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  • 127 NEW JERSEY SEMICONDUCTOR
  • 6 RF POWER
  • 7 SIEMENS

Trans GP BJT PNP 45V 0.1A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.3@0.5mA@10mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 180(Typ) MHz
Type PNP