BC337-16 GP BJT

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  • 416 NATIONAL SEMICONDUCTOR
  • 5 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 0.8A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.7@50mA@500mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 210(Typ) MHz
Type NPN