BC372 Darlington BJT
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- 1 MOTOROLA
- 5913 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@0.25mA@250mA | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 8000@250mA@5V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 200 | MHz |