BC489 GP BJT

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  • 13 NEW JERSEY SEMICONDUCTOR
  • 1873 ON SEMI

Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 200(Typ) MHz
Type NPN