BC546 GP BJT

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  • 1826 NATIONAL SEMICONDUCTOR
  • 5922 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 65V 0.1A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.25@0.5mA@10mA 0.6@5mA@100mA
Maximum Collector Emitter Voltage 65 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 300(Typ) MHz
Type NPN