BC636-16 GP BJT

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  • 22 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 45V 1A 3-Pin SPT

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 830 mW
Maximum Transition Frequency 145(Typ) MHz
Type PNP