BC637 GP BJT
Datasheet: View
Stock
- 1000 MEH
- 900 MOTOROLA
- 1231 NATIONAL SEMICONDUCTOR
- 6546 NEW JERSEY SEMICONDUCTOR
- 12900 PHILIPS
- 38 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 200(Typ) | MHz |
| Type | NPN |