BCW60D GP BJT

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  • 120 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 32 V
Maximum Collector Emitter Saturation Voltage 0.35@0.25mA@10mA 0.55@1.25mA@50mA
Maximum Collector Emitter Voltage 32 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 250 mW
Maximum Transition Frequency 250(Typ) MHz
Type NPN