BCX13 RF BJT
Datasheet: View
Stock
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage | 1.6@50mA@500mA | V |
| Maximum Collector Base Voltage | 125 | V |
| Maximum Collector Emitter Saturation Voltage | 1@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 125 | V |
| Maximum DC Collector Current | 0.8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 120(Typ) | MHz |
| Minimum DC Current Gain | 25@1mA@1V|50@10mA@1V|63@100mA@1V|40@200mA@1V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |