BCX20 GP BJT

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  • 21 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 25V 800A 3-Pin SOT-23 T/R

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.62@50mA@500mA V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 800 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 310000 mW
Type NPN