BCY58-VIII GP BJT

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  • 13 NATIONAL SEMICONDUCTOR
  • 11123 NEW JERSEY SEMICONDUCTOR
  • 5 SGS

Trans GP BJT NPN 32V 0.2A 3-Pin TO-18

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 32 V
Maximum Collector Emitter Saturation Voltage 0.35@250uA@10mA|0.7@2.5mA@100mA V
Maximum Collector Emitter Voltage 32 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 340 mW
Maximum Transition Frequency 150(Min) MHz
Type NPN