BCY58A GP BJT
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- 7 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 32 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Power Dissipation | 360 | mW |
| Maximum Transition Frequency | 125(Typ) | MHz |
| Type | NPN |