BD121 GP BJT

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  • 109 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 5A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 45000 mW
Maximum Transition Frequency 60(Typ) MHz
Type NPN