BD137 GP BJT

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  • 5 NATIONAL SEMICONDUCTOR
  • 11970 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 1.5A 3-Pin TO-225 Bulk

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Features Values Unit
Maximum Collector Emitter Saturation Voltage 0.5@0.05A@0.5A V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1250 mW
Type NPN
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Voltage 60 V
Maximum Emitter Base Voltage 5 V
Maximum DC Collector Current 1.5 A