BD137-16 GP BJT

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  • 5478 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 1.5A 3-Pin TO-126 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1250 mW
Maximum Transition Frequency 190(Typ) MHz
Type NPN