BD139 GP BJT
Datasheet: View
Stock
- 4 NATIONAL SEMICONDUCTOR
- 7153 NEW JERSEY SEMICONDUCTOR
- 57 SOLID STATE DEVICES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Type | NPN |