BD139-10 GP BJT

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  • 1400 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 1.5A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 8000 mW
Maximum Transition Frequency 190(Typ) MHz
Type NPN