BD139-16 GP BJT
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- 503 NEW JERSEY SEMICONDUCTOR
- 181 SOLID STATE DEVICES
Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) SOT-32 Tube
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.05A@0.5A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Type | NPN |