BD140-16 GP BJT
Datasheet: View
Stock
- 3700 NEW JERSEY SEMICONDUCTOR
- 735 SAMSUNG
Trans GP BJT PNP 80V 1.5A 3-Pin(3+Tab) TO-126 Box
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 8000 | mW |
| Maximum Transition Frequency | 160(Typ) | MHz |
| Type | PNP |