BD157 GP BJT

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  • 44 MOTOROLA
  • 3218 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-225AA

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 275 V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 20000 mW
Type NPN