BD175 GP BJT

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  • 8638 NEW JERSEY SEMICONDUCTOR
  • 323 SGS

Trans GP BJT NPN 45V 3A 3-Pin(3+Tab) TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.8@0.1A@1A V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN