BD232 GP BJT
Datasheet: View
Stock
- 9 MOTOROLA
- 8 NATIONAL SEMICONDUCTOR
- 5279 NEW JERSEY SEMICONDUCTOR
- 1 PHILIPS
- 32 SILICONIX
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 20000 | mW |
| Type | NPN |