BD235 GP BJT

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  • 600 NATIONAL SEMICONDUCTOR
  • 5275 NEW JERSEY SEMICONDUCTOR
  • 25 PHILIPS

Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) SOT-32 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.6@0.1A@1A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 25000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN