BD239C GP BJT
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- 2 NATIONAL SEMICONDUCTOR
- 5222 NEW JERSEY SEMICONDUCTOR
- 59 SILICON GENERAL
- 33 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.2A@1A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Type | NPN |