BD241 GP BJT
Datasheet: View
Stock
- 9 MEV
- 5083 NEW JERSEY SEMICONDUCTOR
- 10 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.2@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 45 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |