BD241A GP BJT
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Stock
- 1 NATIONAL SEMICONDUCTOR
- 6435 NEW JERSEY SEMICONDUCTOR
- 1 RCA
- 1 ST MICRO
- 192 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.2@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |