BD243B GP BJT
Datasheet: View
Stock
- 4130 MOTOROLA
- 1 NATIONAL SEMICONDUCTOR
- 5824 NEW JERSEY SEMICONDUCTOR
- 4 SGS
- 3 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@1A@6A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 65000 | mW |
| Type | NPN |