BD245A GP BJT

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  • 223 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) SOT-93

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage \1@0.3A@3A 4@2.5A@10A\
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Type NPN