BD249B GP BJT

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  • 4732 NEW JERSEY SEMICONDUCTOR
  • 16 SGS

Trans GP BJT NPN 80V 25A 3-Pin(3+Tab) SOT-93

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage \1.8@1.5A@15A 4@5A@25A\
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 25 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN