BD312 GP BJT

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  • 3268 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.5A@5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 115000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP