BD314 GP BJT

default part image

Datasheet: View

Stock

  • 3665 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 10A

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1@0.5A@5A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 115000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP