BD329 GP BJT

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  • 5102 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 20V 3A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 32 V
Maximum Collector Emitter Saturation Voltage 0.5@0.2A@2A V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 15000 mW
Maximum Transition Frequency 130(Typ) MHz
Type NPN