BD434A GP BJT

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  • 30 NATIONAL SEMICONDUCTOR

Trans GP BJT PNP 22V 4A 3-Pin(3+Tab) TO-126 Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 22 V
Maximum Collector Emitter Saturation Voltage 0.5@0.2A@2A V
Maximum Collector Emitter Voltage 22 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP