BD440 GP BJT

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  • 10 NATIONAL SEMICONDUCTOR
  • 6038 NEW JERSEY SEMICONDUCTOR
  • 2390 SGS
  • 3 SIEMENS

Trans GP BJT PNP 60V 4A Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.8@0.2A@2A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP