BD501B GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	85	V
Maximum Collector Emitter Saturation Voltage	1@3.5A@0.35A	V
Maximum Collector Emitter Voltage	80	V
Maximum DC Collector Current	10	A
Maximum Emitter Base Voltage	5	V
Maximum Operating Temperature	150	ﾡC
Maximum Power Dissipation	75000	mW
Maximum Transition Frequency	8(Typ)	MHz
Type	NPN