BD537 GP BJT
Datasheet: View
Stock
- 23 NATIONAL SEMICONDUCTOR
- 4751 NEW JERSEY SEMICONDUCTOR
- 86 SGS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.8@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Type | NPN |