BD537 GP BJT

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  • 23 NATIONAL SEMICONDUCTOR
  • 4751 NEW JERSEY SEMICONDUCTOR
  • 86 SGS

Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) TO-220 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.8@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Type NPN