BD538 GP BJT
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- 2 NATIONAL SEMICONDUCTOR
- 4614 NEW JERSEY SEMICONDUCTOR
- 90 RF POWER
- 39 SGS
Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) TO-220
Request For Quote| Features | Values | Unit |
|---|---|---|
| Maximum Collector Emitter Voltage | 80 | V |
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.8@0.2A@2A | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 12(Typ) | MHz |
| Type | PNP |