BD539 GP BJT

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  • 4513 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 5A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage \0.25@125mA@1A 0.8@375mA@3A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 45000 mW
Type NPN