BD540 GP BJT
Datasheet: View
Stock
- 5033 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | \0.25@0.125A@1A | 0.8@0.375A@3A |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 45000 | mW |
| Type | PNP |