BD544 GP BJT

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  • 3635 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 40V 8A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage \0.5@0.3A@3A 0.5@1A@5A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 70000 mW
Type PNP