BD637 GP BJT

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  • 38 NATIONAL SEMICONDUCTOR
  • 2156 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 2A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.6@0.1A@1A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 2000 mW
Type NPN