BD679 Darlington BJT
Datasheet: View
Stock
- 3705 BANESA
- 1 NATIONAL SEMICONDUCTOR
- 6654 NEW JERSEY SEMICONDUCTOR
- 10 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 750@1.5A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |