BD712 GP BJT

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  • 17 NEW JERSEY SEMICONDUCTOR
  • 15850 SGS

Trans GP BJT PNP 100V 12A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 75000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP