BD723 GP BJT

default part image

Datasheet: View

Stock

  • 5263 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 4A

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN