BD744B GP BJT

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  • 4 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 90 V
Maximum Collector Emitter Saturation Voltage 3@5A@15A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 90000 mW
Type PNP